unsymmetrical distribution中文什么意思

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Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel , the quasi - two - dimensional analysis methods are used to deduced the drain current , threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6 . 0 simulation output . the degradations of device output conductance , subthreshold conduction and rf characteristics are also analyzed
針對(duì)mos器件熱載流子退化所引入的界面態(tài)，根據(jù)其沿溝道非均勻分布的模型，采用準(zhǔn)二維分析方法對(duì)退化后器件的漏源電流、閾值電壓和飽和區(qū)溝道電場(chǎng)作了詳細(xì)的理論推導(dǎo)，并與實(shí)驗(yàn)結(jié)果和器件二維數(shù)值模擬軟件minimos6 . 0的計(jì)算結(jié)果進(jìn)行了驗(yàn)證比較。

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